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SEMICONDUCTOR
TECHNICAL DATA
SWITCHING APPLICATION. FEATURES
High Current. Low VCE(sat). : VCE(sat) 250mV at IC=200mA/IB=10mA.
A G H
2 1
KTC4072E
EPITAXIAL PLANAR NPN TRANSISTOR
E B
D 3
DIM A B
C D E G H J
Complementary to KTA2012E.
MILLIMETERS _ 1.60 + 0.10 _ 0.85 + 0.10 _ 0.70 + 0.10
0.27+0.10/-0.05 _ 1.60 + 0.10 _ 1.00 + 0.10 0.50 _ 0.13 + 0.05
CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Range * Single pulse Pw=1mS.
SYMBOL VCBO VCEO VEBO IC ICP * PC Tj Tstg
RATING 15 12 6 500 1 100 150 -55 150
UNIT V V V mA A mW
1. EMITTER 2. BASE 3. COLLECTOR
C
MAXIMUM RATING (Ta=25
)
J
ESM
Marking
Type Name
LZ
ELECTRICAL CHARACTERISTICS (Ta=25
CHARACTERISTIC Collector Cut-off Current Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage DC Current Gain Collector-Emitter Saturation Voltage Transition Frequency Collector Output Capacitance ICBO V(BR)CBO V(BR)CEO V(BR)EBO hFE VCE(sat) fT Cob
)
TEST CONDITION VCB=15V, IE=0 IC=10 A IC=1mA IE=10 A VCE=2V, IC=10mA IC=200mA, IB=10mA VCE=2V, IC=10mA, fT=100MHz VCB=10V, IE=0, f=1MHz MIN. 15 12 6 270 TYP. 90 320 7.5 MAX. 100 680 250 UNIT nA V V V mV MHz pF
SYMBOL
2002. 2. 20
Revision No : 2
1/3
KTC4072E
h FE - I C
1K DC CURRENT GAIN h FE 500 300
Ta=125 C Ta=25 C Ta=-40 C
VCE(sat) - I C
COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (mV) 1K 500 300 100 50 30 10 5 3 1 1 3 10
C 125 Ta= CC 25 0 Ta= Ta=-4
I C /IB =20
100 50 30
VCE =2V
10 1
3
10
30
100
300
1K
30
100
300
1K
COLLECTOR CURRENT I C (mA)
COLLECTOR CURRENT I C (mA)
VCE(sat) - I C
COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (mV) 1K 500 300 100 50 30 10 5 3 1 1
I C /IB =50
I C /I B =20 10 I C/I B =
VBE(sat) - I C
BASE-EMITTER SATURATION VOLTAGE VBE(sat) (mV) 10K 5K 3K
I C /IB =20
Ta=25 C
1K 500 300
Ta=-40 C
Ta=25 C 5 C Ta=12
100 3 10 30 100 300 1K 1 3 10 30 100 300 1K COLLECTOR CURRENT I C (mA) COLLECTOR CURRENT I C (mA)
I C - V BE
COLLECTOR CURRENT I C (mA) 500 300 100
5C Ta=40 C Ta=1 Ta=2
VCE =2V
fT - IC
TRANSITION FREQUENCY f T (MHz) 1K 500 300
VCE =2V Ta=25 C
1K
50 30 10 5 3 1 0
25 C
100 50 30
10 1 3 10 30 100 300 1K COLLECTOR CURRENT I C (mA)
0.5
1.0
1.5
BASE-EMITTER VOLTAGE VBE (V)
2002. 2. 20
Revision No : 2
2/3
KTC4072E
C ob - VCB , C ib - VEB
COLLECTOR INPUT CAPACITANCE C ib (PF) COLLECTOR OUTPUT CAPACITANCE C ob (PF)
I E =0A f=1MHz Ta=25 C
500 300 100 50 30 10 5 3 1
COLLECTOR POWER DISSIPATION P C (mW)
1K
Pc - Ta
200
150
C ib C ob
100
50
0 0 25 50 75 100 125 150 AMBIENT TEMPERATURE Ta ( C)
0.1
0.3
1
3
10
30
100
COLLECTOR-BASE VOLTAGE VCB (V) EMITTER-BASE VOLTAGE VEB (V)
2002. 2. 20
Revision No : 2
3/3

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